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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="other" dtd-version="1.2" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">Journal of Communications Technology and Electronics</journal-id><journal-title-group><journal-title xml:lang="en">Journal of Communications Technology and Electronics</journal-title><trans-title-group xml:lang="ru"><trans-title>Радиотехника и электроника</trans-title></trans-title-group></journal-title-group><issn publication-format="print">0033-8494</issn><issn publication-format="electronic">3034-5901</issn><publisher><publisher-name xml:lang="en">The Russian Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">650579</article-id><article-id pub-id-type="doi">10.31857/S0033849423030026</article-id><article-id pub-id-type="edn">ICLVJV</article-id><article-categories><subj-group subj-group-type="toc-heading" xml:lang="en"><subject>NEW ELECTRONIC SYSTEMS AND ELEMENTS</subject></subj-group><subj-group subj-group-type="toc-heading" xml:lang="ru"><subject>НОВЫЕ РАДИОЭЛЕКТРОННЫЕ СИСТЕМЫ И ЭЛЕМЕНТЫ</subject></subj-group><subj-group subj-group-type="article-type"><subject>Unknown</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Throttle-Free Booster DC/DC Converter</article-title><trans-title-group xml:lang="ru"><trans-title>Бездроссельный повышающий DC/DC-преобразователь</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Babenko</surname><given-names>V. P.</given-names></name><name xml:lang="ru"><surname>Бабенко</surname><given-names>В. П.</given-names></name></name-alternatives><email>bitukov@mirea.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Bityukov</surname><given-names>V. K.</given-names></name><name xml:lang="ru"><surname>Битюков</surname><given-names>В. К.</given-names></name></name-alternatives><email>bitukov@mirea.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Lavrenov</surname><given-names>A. I.</given-names></name><name xml:lang="ru"><surname>Лавренов</surname><given-names>А. И.</given-names></name></name-alternatives><email>bitukov@mirea.ru</email><xref ref-type="aff" rid="aff1"/></contrib></contrib-group><aff-alternatives id="aff1"><aff><institution xml:lang="en">MIREA—Russian Technological University</institution></aff><aff><institution xml:lang="ru">МИРЭА – Российский технологический университет</institution></aff></aff-alternatives><pub-date date-type="pub" iso-8601-date="2023-03-01" publication-format="electronic"><day>01</day><month>03</month><year>2023</year></pub-date><volume>68</volume><issue>3</issue><issue-title xml:lang="en"/><issue-title xml:lang="ru"/><fpage>305</fpage><lpage>312</lpage><history><date date-type="received" iso-8601-date="2025-01-31"><day>31</day><month>01</month><year>2025</year></date></history><permissions><copyright-statement xml:lang="en">Copyright ©; 2023, В.П. Бабенко, В.К. Битюков, А.И. Лавренов</copyright-statement><copyright-statement xml:lang="ru">Copyright ©; 2023, В.П. Бабенко, В.К. Битюков, А.И. Лавренов</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="en">В.П. Бабенко, В.К. Битюков, А.И. Лавренов</copyright-holder><copyright-holder xml:lang="ru">В.П. Бабенко, В.К. Битюков, А.И. Лавренов</copyright-holder></permissions><self-uri xlink:href="https://innoscience.ru/0033-8494/article/view/650579">https://innoscience.ru/0033-8494/article/view/650579</self-uri><abstract xml:lang="en"><p>The results of the analysis of the features of the charge pumping process in devices with switched capacitors, as well as the features of switching processes in transient operating modes, are presented. The methods by which a high efficiency of charge pumping is achieved are considered. Circuit modeling made it possible to refine the characteristics of processes, minimize conversion losses, formulate recommendations for choosing the parameters of converter elements, and generating control signals.</p></abstract><trans-abstract xml:lang="ru"><p id="idm45181323411712">Представлены результаты анализа особенностей процесса накачки заряда в устройствах с коммутируемыми конденсаторами, а также особенностей коммутационных процессов в переходных режимах работы. Рассмотрены способы, которыми достигается высокая эффективность накачки заряда. Схемотехническое моделирование позволило уточнить характеристики процессов, минимизировать потери преобразования, сформулировать рекомендации по выбору параметров элементов преобразователей и формированию сигналов управления.</p></trans-abstract><kwd-group xml:lang="en"><kwd>charge pumping process</kwd><kwd>conversion losses</kwd><kwd>switching processes</kwd><kwd>transient operating modes</kwd></kwd-group><funding-group/></article-meta></front><body></body><back><ref-list><ref id="B1"><label>1.</label><mixed-citation>Яблоков Д. // Компоненты и технологии. 2005. № 2. С. 96.</mixed-citation></ref><ref id="B2"><label>2.</label><mixed-citation>Бабенко В.П., Битюков В.К. // Рос. технол. журн. 2021. Т. 9. № 2. С. 66.</mixed-citation></ref><ref id="B3"><label>3.</label><mixed-citation>Бабенко В.П., Битюков В.К. // РЭ. 2019. Т. 64. № 2. С. 199.</mixed-citation></ref><ref id="B4"><label>4.</label><mixed-citation>Битюков В.К., Симачков Д.С., Бабенко В.П. Источники вторичного электропитания. М.: Инфра-Инженерия, 2020.</mixed-citation></ref></ref-list></back></article>
