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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">Journal of Communications Technology and Electronics</journal-id><journal-title-group><journal-title xml:lang="en">Journal of Communications Technology and Electronics</journal-title><trans-title-group xml:lang="ru"><trans-title>Радиотехника и электроника</trans-title></trans-title-group></journal-title-group><issn publication-format="print">0033-8494</issn><issn publication-format="electronic">3034-5901</issn><publisher><publisher-name xml:lang="en">The Russian Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">684119</article-id><article-id pub-id-type="doi">10.31857/S0033849425010043</article-id><article-id pub-id-type="edn">HJLCEQ</article-id><article-categories><subj-group subj-group-type="toc-heading"><subject>ЭЛЕКТРОНИКА СВЧ</subject></subj-group><subj-group subj-group-type="article-type"><subject>Research Article</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Effect of additional dielectric layer and grounded shield on rf characteristics of GaAs microwave monolithic integrated circuit elements in 3D-integrated modules</article-title><trans-title-group xml:lang="ru"><trans-title>Влияние дополнительного диэлектрического слоя и заземленного экрана на высокочастотные характеристики элементов GаAs микросхем в 3D-интегрированных модулях</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Sheyerman</surname><given-names>F. I.</given-names></name><name xml:lang="ru"><surname>Шеерман</surname><given-names>Ф. И.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><email>fish@tusur.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Goleneva</surname><given-names>N. V.</given-names></name><name xml:lang="ru"><surname>Голенева</surname><given-names>Н. В.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><email>fish@tusur.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Kokolov</surname><given-names>A. А.</given-names></name><name xml:lang="ru"><surname>Коколов</surname><given-names>А. А.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><email>fish@tusur.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Babak</surname><given-names>L. I.</given-names></name><name xml:lang="ru"><surname>Бабак</surname><given-names>Л. И.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><email>fish@tusur.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Cherkashin</surname><given-names>M. V.</given-names></name><name xml:lang="ru"><surname>Черкашин</surname><given-names>М. В.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><email>fish@tusur.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Panasenko</surname><given-names>P. V.</given-names></name><name xml:lang="ru"><surname>Панасенко</surname><given-names>П. В.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><email>fish@tusur.ru</email><xref ref-type="aff" rid="aff2"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Volosov</surname><given-names>А. V.</given-names></name><name xml:lang="ru"><surname>Волосов</surname><given-names>А. В.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><email>fish@tusur.ru</email><xref ref-type="aff" rid="aff2"/></contrib></contrib-group><aff-alternatives id="aff1"><aff><institution xml:lang="en">Tomsk State University of Control Systems and Radioelectronics</institution></aff><aff><institution xml:lang="ru">Томский государственный университет систем управления и радиоэлектроники</institution></aff></aff-alternatives><aff-alternatives id="aff2"><aff><institution xml:lang="en">SC «MERI»</institution></aff><aff><institution xml:lang="ru">АО НИИМЭ</institution></aff></aff-alternatives><pub-date date-type="pub" iso-8601-date="2025-01-17" publication-format="electronic"><day>17</day><month>01</month><year>2025</year></pub-date><volume>70</volume><issue>1</issue><fpage>27</fpage><lpage>36</lpage><history><date date-type="received" iso-8601-date="2025-06-13"><day>13</day><month>06</month><year>2025</year></date></history><permissions><copyright-statement xml:lang="en">Copyright ©; 2025, Russian Academy of Sciences</copyright-statement><copyright-statement xml:lang="ru">Copyright ©; 2025, Российская академия наук</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="en">Russian Academy of Sciences</copyright-holder><copyright-holder xml:lang="ru">Российская академия наук</copyright-holder></permissions><self-uri xlink:href="https://innoscience.ru/0033-8494/article/view/684119">https://innoscience.ru/0033-8494/article/view/684119</self-uri><abstract xml:lang="en"><p>The effect of coating GaAs monolithic integrated circuit with a benzocyclobutene dielectric layer and grounded copper shield is investigated. Using electromagnetic simulation up to 40 GHz, changes of RF characteristics of microstrip and coplanar transmission lines, a Marshand balun, and a bandpass filter due to coating are demonstrated. It is shown that from the performance variation viewpoint, the application of lines is preferred in GaAs monolithic integrated circuits used in 3D-integrated modules with such the coating.</p></abstract><trans-abstract xml:lang="ru"><p>С использованием электромагнитного моделирования в диапазоне частот до 40 ГГц исследовано влияние покрытия GaAs монолитных интегральных схем (МИС) диэлектрическим слоем бензоциклобутена и металлизированным слоем из меди на СВЧ-характеристики микрополосковой (МПЛ) и копланарной (КПЛ) линий передачи, а также симметрирующего трансформатора и полосового фильтра на базе МПЛ. Показано, что в GaAs МИС с указанным покрытием, используемых в 3D-интегрированных модулях, с точки зрения вариации характеристик предпочтительнее применять КПЛ<italic>.</italic></p></trans-abstract><kwd-group xml:lang="en"><kwd>monolithic integrated circuit</kwd><kwd>interposer</kwd><kwd>microstrip waveguide</kwd><kwd>coplanar waveguide</kwd><kwd>Balun – balanced-unbalanced</kwd><kwd>Integrated module</kwd><kwd>Benzocyclobutene</kwd></kwd-group><kwd-group xml:lang="ru"><kwd>МИС</kwd><kwd>интерпозер</kwd><kwd>микрополосковая линия</kwd><kwd>копланарная линия</kwd><kwd>симметрирующий трансформатор</kwd><kwd>интегрированный модуль</kwd><kwd>бензоциклобутен</kwd></kwd-group><funding-group><award-group><funding-source><institution-wrap><institution xml:lang="ru">Министерство науки и высшего образования Российской Федерации</institution></institution-wrap><institution-wrap><institution xml:lang="en">Ministry of Science and Higher Education of the Russian Federation</institution></institution-wrap></funding-source><award-id>075-03-2023-187</award-id></award-group></funding-group></article-meta></front><body></body><back><ref-list><ref id="B1"><label>1.</label><mixed-citation>Воробьев С. // Электроника НТБ. 2018. № 7. 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