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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">Journal of Communications Technology and Electronics</journal-id><journal-title-group><journal-title xml:lang="en">Journal of Communications Technology and Electronics</journal-title><trans-title-group xml:lang="ru"><trans-title>Радиотехника и электроника</trans-title></trans-title-group></journal-title-group><issn publication-format="print">0033-8494</issn><issn publication-format="electronic">3034-5901</issn><publisher><publisher-name xml:lang="en">The Russian Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">684751</article-id><article-id pub-id-type="doi">10.31857/S0033849424100085</article-id><article-id pub-id-type="edn">HPXJGV</article-id><article-categories><subj-group subj-group-type="toc-heading"><subject>НАНОЭЛЕКТРОНИКА</subject></subj-group><subj-group subj-group-type="article-type"><subject>Research Article</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Comparative analysis of magnetic and electronic properties of 2d phases of chromium tellurides</article-title><trans-title-group xml:lang="ru"><trans-title>Сравнительный анализ магнитных и электронных свойств 2d фаз теллуридов хрома</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Kartsev</surname><given-names>A. I.</given-names></name><name xml:lang="ru"><surname>Карцев</surname><given-names>А. И.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><email>karec1@gmail.com</email><xref ref-type="aff" rid="aff1"/><xref ref-type="aff" rid="aff2"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Safronov</surname><given-names>A. A.</given-names></name><name xml:lang="ru"><surname>Сафронов</surname><given-names>А. А.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><email>karec1@gmail.com</email><xref ref-type="aff" rid="aff3"/></contrib></contrib-group><aff-alternatives id="aff1"><aff><institution xml:lang="en">Computing Center of Far Eastern Branch of RAS</institution></aff><aff><institution xml:lang="ru">Вычислительный центр ДВО РАН</institution></aff></aff-alternatives><aff-alternatives id="aff2"><aff><institution xml:lang="en">Bauman Moscow State Technical University</institution></aff><aff><institution xml:lang="ru">Московский государственный технический университет им. Н.Э. Баумана</institution></aff></aff-alternatives><aff-alternatives id="aff3"><aff><institution xml:lang="en">MIREA – Russian Technological University</institution></aff><aff><institution xml:lang="ru">МИРЭА - Российский технологический университет</institution></aff></aff-alternatives><pub-date date-type="pub" iso-8601-date="2024-10-14" publication-format="electronic"><day>14</day><month>10</month><year>2024</year></pub-date><volume>69</volume><issue>10</issue><fpage>989</fpage><lpage>995</lpage><history><date date-type="received" iso-8601-date="2025-06-16"><day>16</day><month>06</month><year>2025</year></date></history><permissions><copyright-statement xml:lang="en">Copyright ©; 2024, Russian Academy of Sciences</copyright-statement><copyright-statement xml:lang="ru">Copyright ©; 2024, Российская академия наук</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="en">Russian Academy of Sciences</copyright-holder><copyright-holder xml:lang="ru">Российская академия наук</copyright-holder></permissions><self-uri xlink:href="https://innoscience.ru/0033-8494/article/view/684751">https://innoscience.ru/0033-8494/article/view/684751</self-uri><abstract xml:lang="en"><p>The first-principle modeling of two different quasi-two-dimensional phases based on the volume phases Cr<sub>2</sub>Te<sub>3</sub> and CrTe<sub>3</sub> is carried out. Structural relaxation of the obtained 2D compounds and their volumetric prototypes was performed within the framework of the density functional method and the projection plane wave method. Magnetic anisotropy in various crystallographic planes of quasi-two-dimensional structures and corresponding bulk materials has been studied. An increase in magnetic anisotropy was found during the transition from bulk phases to quasi-two-dimensional phases of Cr<sub>2</sub>Te<sub>3</sub>/CrTe<sub>3</sub>. A charge density map is constructed and the density of electronic states is found for 2D Cr<sub>2</sub>Te<sub>3</sub> and CrTe<sub>3</sub> materials.</p></abstract><trans-abstract xml:lang="ru"><p>Проведено первопринципное моделирование двух различных квазидвумерных фаз на основе объемных фаз Cr<sub>2</sub>Te<sub>3</sub> и CrTe<sub>3</sub>. В рамках метода функционала плотности и метода проекционных плоских волн произведена структурная релаксация полученных 2D-соединений и их объемных прототипов. Исследована магнитная анизотропия в различных кристаллографических плоскостях квазидвумерных структур и соответствующих объемных материалов. Обнаружено увеличение магнитной анизотропии при переходе от объемных фаз к квазидвумерным фазам Cr<sub>2</sub>Te<sub>3</sub>/CrTe<sub>3</sub>. Построена карта зарядовой плотности и найдена плотность электронных состояний для 2D-материалов Cr<sub>2</sub>Te<sub>3</sub> и CrTe<sub>3</sub>.</p></trans-abstract><kwd-group xml:lang="en"><kwd>2D magnet</kwd><kwd>density functional theory</kwd><kwd>magnetic anisotropy</kwd><kwd>density of electronic states</kwd></kwd-group><kwd-group xml:lang="ru"><kwd>2D-магнетик</kwd><kwd>теория функционала плотности</kwd><kwd>магнитная анизотропия</kwd><kwd>плотность электронных состояний</kwd></kwd-group><funding-group/></article-meta></front><body></body><back><ref-list><ref id="B1"><label>1.</label><mixed-citation>Zhang P., Xue S., Wang J. // Materials &amp; Design. 2020. V. 192. 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