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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">Journal of Communications Technology and Electronics</journal-id><journal-title-group><journal-title xml:lang="en">Journal of Communications Technology and Electronics</journal-title><trans-title-group xml:lang="ru"><trans-title>Радиотехника и электроника</trans-title></trans-title-group></journal-title-group><issn publication-format="print">0033-8494</issn><issn publication-format="electronic">3034-5901</issn><publisher><publisher-name xml:lang="en">The Russian Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">684752</article-id><article-id pub-id-type="doi">10.31857/S0033849424100099</article-id><article-id pub-id-type="edn">HPSZRU</article-id><article-categories><subj-group subj-group-type="toc-heading"><subject>НАНОЭЛЕКТРОНИКА</subject></subj-group><subj-group subj-group-type="article-type"><subject>Research Article</subject></subj-group></article-categories><title-group><article-title xml:lang="en">On iron-doped diamond-like films produced in a hollow cathode discharge</article-title><trans-title-group xml:lang="ru"><trans-title>О допированных железом алмазоподобных пленках, полученных в разряде с полым катодом</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Sorokin</surname><given-names>I. A.</given-names></name><name xml:lang="ru"><surname>Сорокин</surname><given-names>И. А.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><email>iasorokin@mail.ru</email><xref ref-type="aff" rid="aff1"/><xref ref-type="aff" rid="aff2"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Kolodko</surname><given-names>D. V.</given-names></name><name xml:lang="ru"><surname>Колодко</surname><given-names>Д. В.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><email>iasorokin@mail.ru</email><xref ref-type="aff" rid="aff1"/><xref ref-type="aff" rid="aff2"/></contrib></contrib-group><aff-alternatives id="aff1"><aff><institution xml:lang="en">Fryazino Branch Kotelnikov Institute of Radioengineering and Electronics of RAS</institution></aff><aff><institution xml:lang="ru">Фрязинский филиал Института радиотехники и электроники им. В.А. Котельникова РАН</institution></aff></aff-alternatives><aff-alternatives id="aff2"><aff><institution xml:lang="en">National Research Nuclear University MEPhI</institution></aff><aff><institution xml:lang="ru">Национальный исследовательский ядерный университет «МИФИ»</institution></aff></aff-alternatives><pub-date date-type="pub" iso-8601-date="2024-10-14" publication-format="electronic"><day>14</day><month>10</month><year>2024</year></pub-date><volume>69</volume><issue>10</issue><fpage>996</fpage><lpage>999</lpage><history><date date-type="received" iso-8601-date="2025-06-16"><day>16</day><month>06</month><year>2025</year></date></history><permissions><copyright-statement xml:lang="en">Copyright ©; 2024, Russian Academy of Sciences</copyright-statement><copyright-statement xml:lang="ru">Copyright ©; 2024, Российская академия наук</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="en">Russian Academy of Sciences</copyright-holder><copyright-holder xml:lang="ru">Российская академия наук</copyright-holder></permissions><self-uri xlink:href="https://innoscience.ru/0033-8494/article/view/684752">https://innoscience.ru/0033-8494/article/view/684752</self-uri><abstract xml:lang="en"><p>The paper presents the results of measuring the current-voltage characteristics of iron-doped diamond-like films obtained by a combined method of physical sputtering of an iron cathode and plasma-chemical deposition in a hollow-cathode discharge. The nonlinear nature of the transverse conductivity of the film and a significant influence of the amplitude value of the sweep voltage on the amplitude value of the current and the shape of the current-voltage characteristic were shown.</p></abstract><trans-abstract xml:lang="ru"><p>Представлены результаты измерения вольт-амперных характеристик допированных железом алмазоподобных пленок, полученных комбинированным методом физического распыления железного катода и плазмохимического осаждения в разряде с полым катодом. Показан нелинейный характер поперечной проводимости пленки, а также отмечено значительное влияние амплитудного значения напряжения развертки на амплитудное значение тока и форму вольт-амперной характеристики.</p></trans-abstract><kwd-group xml:lang="en"><kwd>diamond-like carbon</kwd><kwd>plasma-chemical deposition</kwd><kwd>hollow-cathode discharge</kwd><kwd>thin film</kwd><kwd>nonlinear current-voltage characteristic</kwd><kwd>electrical conductivity</kwd></kwd-group><kwd-group xml:lang="ru"><kwd>алмазоподобный углерод</kwd><kwd>плазмохимическое осаждение</kwd><kwd>разряд с полым катодом</kwd><kwd>тонкая пленка</kwd><kwd>нелинейная вольт-амперная характеристика</kwd><kwd>электропроводность</kwd></kwd-group><funding-group><award-group><funding-source><institution-wrap><institution xml:lang="ru">Российский научный фонд</institution></institution-wrap><institution-wrap><institution xml:lang="en">Russian Science Foundation</institution></institution-wrap></funding-source><award-id>23-29-00276</award-id></award-group></funding-group></article-meta></front><body></body><back><ref-list><ref id="B1"><label>1.</label><mixed-citation>Сорокин И.А., Колодко Д.В., Краснобаев К.И. // РЭ. 2020. Т.65. №3. С.288.</mixed-citation></ref><ref id="B2"><label>2.</label><mixed-citation>Sorokin I.A., Kolodko D.V. // Vacuum. 2023. V. 207. Article No. 111570.</mixed-citation></ref><ref id="B3"><label>3.</label><mixed-citation>Vedeneev A. S., Luzanov V. A., Rylkov V. V. // Semiconductors. 2019. V. 53. № 14. P. 1970.</mixed-citation></ref><ref id="B4"><label>4.</label><mixed-citation>Николаев С.Н., Веденеев А.С., Лузанов В.А. и др. // РЭ. 2021. Т. 66. № 10. С. 1024.</mixed-citation></ref></ref-list></back></article>
