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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">Journal of Communications Technology and Electronics</journal-id><journal-title-group><journal-title xml:lang="en">Journal of Communications Technology and Electronics</journal-title><trans-title-group xml:lang="ru"><trans-title>Радиотехника и электроника</trans-title></trans-title-group></journal-title-group><issn publication-format="print">0033-8494</issn><issn publication-format="electronic">3034-5901</issn><publisher><publisher-name xml:lang="en">The Russian Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">684753</article-id><article-id pub-id-type="doi">10.31857/S0033849424100106</article-id><article-id pub-id-type="edn">HPSBDR</article-id><article-categories><subj-group subj-group-type="toc-heading"><subject>НАНОЭЛЕКТРОНИКА</subject></subj-group><subj-group subj-group-type="article-type"><subject>Research Article</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Production of ferroelectric hafnium oxide films by magnetron sputtering</article-title><trans-title-group xml:lang="ru"><trans-title>Получение сегнетоэлектрических пленок оксида гафния методом магнетронного распыления</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Luzanov</surname><given-names>V. A.</given-names></name><name xml:lang="ru"><surname>Лузанов</surname><given-names>В. А.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><email>valery@luzanov.ru</email><xref ref-type="aff" rid="aff1"/></contrib></contrib-group><aff-alternatives id="aff1"><aff><institution xml:lang="en">Fryazino Branch Kotelnikov Institute of Radioengineering and Electronics of RAS</institution></aff><aff><institution xml:lang="ru">Фрязинский филиал Института радиотехники и электроники им. В. А. Котельникова РАН</institution></aff></aff-alternatives><pub-date date-type="pub" iso-8601-date="2024-10-14" publication-format="electronic"><day>14</day><month>10</month><year>2024</year></pub-date><volume>69</volume><issue>10</issue><fpage>1000</fpage><lpage>1003</lpage><history><date date-type="received" iso-8601-date="2025-06-16"><day>16</day><month>06</month><year>2025</year></date></history><permissions><copyright-statement xml:lang="en">Copyright ©; 2024, Russian Academy of Sciences</copyright-statement><copyright-statement xml:lang="ru">Copyright ©; 2024, Российская академия наук</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="en">Russian Academy of Sciences</copyright-holder><copyright-holder xml:lang="ru">Российская академия наук</copyright-holder></permissions><self-uri xlink:href="https://innoscience.ru/0033-8494/article/view/684753">https://innoscience.ru/0033-8494/article/view/684753</self-uri><abstract xml:lang="en"><p>Hafnium oxide films containing a non-centrosymmetric orthorhombic phase capable of spontaneous polarization were obtained by magnetron sputtering. It was shown that the presence of bombardment with negative oxygen ions promotes the formation of the orthorhombic phase.</p></abstract><trans-abstract xml:lang="ru"><p>Методом магнетронного распыления получены пленки оксида гафния, содержащие нецентросимметричную орторомбическую фазу, способную к спонтанной поляризации. Показано, что наличие бомбардировки отрицательными ионами кислорода способствует формированию орторомбической фазы.</p></trans-abstract><kwd-group xml:lang="en"><kwd>hafnium oxide films</kwd><kwd>ferroelectrics</kwd><kwd>orthorhombic phase</kwd></kwd-group><kwd-group xml:lang="ru"><kwd>пленки оксида гафния</kwd><kwd>сегнетоэлектрики</kwd><kwd>орторомбическая фаза</kwd></kwd-group><funding-group><award-group><funding-source><institution-wrap><institution xml:lang="ru">Правительство Российской Федерации</institution></institution-wrap><institution-wrap><institution xml:lang="en">Government of the Russian Federation</institution></institution-wrap></funding-source></award-group></funding-group></article-meta></front><body></body><back><ref-list><ref id="B1"><label>1.</label><mixed-citation>Schenk T., Pešić1 M., Slesazeck S. et.al. // Reports on Progress in Physics. 2020. V. 83. № 8. 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