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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">Journal of Communications Technology and Electronics</journal-id><journal-title-group><journal-title xml:lang="en">Journal of Communications Technology and Electronics</journal-title><trans-title-group xml:lang="ru"><trans-title>Радиотехника и электроника</trans-title></trans-title-group></journal-title-group><issn publication-format="print">0033-8494</issn><issn publication-format="electronic">3034-5901</issn><publisher><publisher-name xml:lang="en">The Russian Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">692013</article-id><article-id pub-id-type="doi">10.7868/S3034590125070089</article-id><article-categories><subj-group subj-group-type="toc-heading"><subject>НАНОЭЛЕКТРОНИКА</subject></subj-group><subj-group subj-group-type="article-type"><subject>Research Article</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Thin Film Formation During the Au Thermal Vacuum Evaporation at the (100) GaAs Substrate Surface</article-title><trans-title-group xml:lang="ru"><trans-title>Процессы формирования пленок Au на подложке (100) GaAs при термическом испарении в вакууме</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Bryantseva</surname><given-names>T. A.</given-names></name><name xml:lang="ru"><surname>Брянцева</surname><given-names>Т. А.</given-names></name></name-alternatives><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Lyubchenko</surname><given-names>V. E.</given-names></name><name xml:lang="ru"><surname>Любченко</surname><given-names>В. Е.</given-names></name></name-alternatives><email>lyubch@fireras.su</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Markov</surname><given-names>I. A.</given-names></name><name xml:lang="ru"><surname>Марков</surname><given-names>И. А.</given-names></name></name-alternatives><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Ten</surname><given-names>Yu. A.</given-names></name><name xml:lang="ru"><surname>Тен</surname><given-names>Ю. А.</given-names></name></name-alternatives><xref ref-type="aff" rid="aff1"/></contrib></contrib-group><aff-alternatives id="aff1"><aff><institution xml:lang="en">Fryazino Branch of the Kotelnikov Institute of Radioengineering and Electronics of RAS</institution></aff><aff><institution xml:lang="ru">Фрязинский филиал Института радиотехники и электроники им. В.А. Котельникова РАН</institution></aff></aff-alternatives><pub-date date-type="pub" iso-8601-date="2025-07-15" publication-format="electronic"><day>15</day><month>07</month><year>2025</year></pub-date><volume>70</volume><issue>7</issue><issue-title xml:lang="en">VOL 70, NO7 (2025)</issue-title><issue-title xml:lang="ru">ТОМ 70, №7 (2025)</issue-title><fpage>689</fpage><lpage>694</lpage><history><date date-type="received" iso-8601-date="2025-10-04"><day>04</day><month>10</month><year>2025</year></date></history><permissions><copyright-statement xml:lang="en">Copyright ©; 2025, Russian Academy of Sciences</copyright-statement><copyright-statement xml:lang="ru">Copyright ©; 2025, Российская академия наук</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="en">Russian Academy of Sciences</copyright-holder><copyright-holder xml:lang="ru">Российская академия наук</copyright-holder><ali:free_to_read xmlns:ali="http://www.niso.org/schemas/ali/1.0/" start_date="2026-07-15"/></permissions><self-uri xlink:href="https://innoscience.ru/0033-8494/article/view/692013">https://innoscience.ru/0033-8494/article/view/692013</self-uri><abstract xml:lang="en"><p>The processes of formation of thin gold films on the surface substrate of gallium arsenide during evaporation in vacuum are investigated. The formation of gallium arsenide islands with a hexagonal lattice structure is detected. The influence of the conditions of manufacturing Au-GaAs contacts on the possibility of their use in microwave devices is discussed.</p></abstract><trans-abstract xml:lang="ru"><p>Исследованы процессы формирования тонких пленок золота на поверхности подложки из арсенида галлия при испарении в вакууме. Обнаружено образование островков арсенида галлия с гексагональной структурой решетки. Обсуждается влияние условий изготовления контактов Au-GaAs на возможность их использования в приборах СВЧ.</p></trans-abstract><kwd-group xml:lang="en"><kwd>gold</kwd><kwd>gallium arsenide</kwd><kwd>vacuum deposition</kwd><kwd>interface</kwd><kwd>hexagonal structure</kwd></kwd-group><kwd-group xml:lang="ru"><kwd>золото</kwd><kwd>арсенид галлия</kwd><kwd>вакуумное осаждение</kwd><kwd>граница раздела</kwd><kwd>гексагональная структура</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена в рамках государственного задания № 075-00395-25-00 ИРЭ РАН им. В. А. Ко­тельникова по теме FFWZ‑2025-0002.</funding-statement></funding-group></article-meta></front><body></body><back><ref-list><ref id="B1"><label>1.</label><mixed-citation>Tung R.T. // Appl. Phys. Rev. 2014. V. 1. № 1. Article No. 011304.</mixed-citation></ref><ref id="B2"><label>2.</label><mixed-citation>Брянцева Т.А., Любченко В.Е., Юневич Е.О. // РЭ. 1995. Т. 40. № 8. 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