电邮这篇文章 Nuclear scanning microprobe in the study of silicon carbide epilayers
- 作者: Buzoverya M.E.1, Karpov I.A.1, Arkhipov A.Y.1, Skvortsov D.A.2, Neverov V.A.2, Mamin B.F.2
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隶属关系:
- Russian Federal Nuclear Center — All-Russia Research Institute of Experimental Physics
- National Research Ogarev Mordovia State University
- 期: 卷 88, 编号 8 (2024)
- 页面: 1287-1292
- 栏目: Fundamental problems and applications of physics of atomic nucleus
- URL: https://innoscience.ru/0367-6765/article/view/676758
- DOI: https://doi.org/10.31857/S0367676524080201
- EDN: https://elibrary.ru/OPKVCM
- ID: 676758
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详细
We presented the results of the study of surfaces of homoepitaxial 4H-SiC layers using a nuclear scanning microprobe in the Rutherford backscattering mode. Analysis of the state of the sample surfaces and synthesis modes showed that an increase in the silicon (Si) content in the upper layers of some samples precedes the formation of highly defective 4H-SiC layers.
作者简介
M. Buzoverya
Russian Federal Nuclear Center — All-Russia Research Institute of Experimental Physics
Email: dismos51@gmail.com
俄罗斯联邦, Sarov, 607188
I. Karpov
Russian Federal Nuclear Center — All-Russia Research Institute of Experimental Physics
Email: dismos51@gmail.com
俄罗斯联邦, Sarov, 607188
A. Arkhipov
Russian Federal Nuclear Center — All-Russia Research Institute of Experimental Physics
Email: dismos51@gmail.com
俄罗斯联邦, Sarov, 607188
D. Skvortsov
National Research Ogarev Mordovia State University
编辑信件的主要联系方式.
Email: dismos51@gmail.com
Research Laboratory “Synthesis and Processing of Silicon Carbide Single Crystals”
俄罗斯联邦, Saransk, 430005V. Neverov
National Research Ogarev Mordovia State University
Email: dismos51@gmail.com
Research Laboratory “Synthesis and Processing of Silicon Carbide Single Crystals”
俄罗斯联邦, Saransk, 430005B. Mamin
National Research Ogarev Mordovia State University
Email: dismos51@gmail.com
Research Laboratory “Synthesis and Processing of Silicon Carbide Single Crystals”
俄罗斯联邦, Saransk, 430005参考
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