Fabrication of submicron CoFeB/MgO/CoFeB magnetic tunnel junction using a resistive mask HSQ/PMMA

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Abstract

The technology of manufacturing magnetic tunnel junctions based on CoFeB/MgO/CoFeB layers with characteristic lateral dimensions from 200 to 700 nm using a combination of HSQ/PMMA electronic resistors has been developed. To study the processes of magnetization reversal in the obtained samples, measurements of magnetoresistance curves were carried out. It is shown that, depending on the structure of the magnetically sensitive layer and the geometric parameters of the TMR contacts, elements with both vortex and quasi-homogeneous distribution of the magnetization of the free layer are realized. At the same time, in the latter, the width of the magnetization reversal front is from 2 to 6 Oe.

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About the authors

I. A. Fedotov

Institute for Physics of Microstructures of the Russian Academy of Sciences

Author for correspondence.
Email: fedotov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950

I. Yu. Pashen’kin

Institute for Physics of Microstructures of the Russian Academy of Sciences

Email: fedotov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950

E. V. Skorokhodov

Institute for Physics of Microstructures of the Russian Academy of Sciences

Email: fedotov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950

N. S. Gusev

Institute for Physics of Microstructures of the Russian Academy of Sciences

Email: fedotov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950

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Supplementary files

Supplementary Files
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2. Fig. 1. The initial multilayer nanostructure for the formation of TMR contacts with quasi-homogeneous (a) and vortex (b) magnetization distribution of the free layer, thicknesses in nm are indicated in parentheses.

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3. Fig. 2. Formation of electrical insulation by spraying a Ta2O5 dielectric (a); the process of explosive lithography (b, c); image of TMR contacts after electrical insulation and opening windows in the dielectric, obtained in a scanning electron microscope (d).

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4. Fig. 3. Sections of magnetoresistance curves corresponding to the process of remagnetization of a quasi-homogeneous free ferromagnetic layer for a single TMR contact with lateral dimensions: a) 2×4 microns; b) 200×400 nm.

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5. Fig. 4. Magnetoresistance curves of a chain of 5 round TMR contacts with a diameter of about 700 nm and a vortex distribution of the magnetization of the free layer.

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