Features of magnetoresistance of a straintronics element in the presence of bistable magnetic states

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Abstract

The paper presents the findings of a study investigating the dependence of the magnetoresistance of a magnetic straintronics element comprising a multilayer film nanostructure of Ta (5 nm)/FeNiCo (20 nm)/CoFe (10 nm)/Ta (5 nm) layers, successively sputtered on a silicon substrate, on the strength of the external remagnetization magnetic field and compression stress. It has been established that the experimental value of the maximum change in the magnetoresistance of the nano-structure at remagnetization of layers is less than the theoretical value. This discrepancy can be attributed to the random character of the orientational phase transition of the bistable magnetic system in proximity of the critical value of the external magnetic field. A variational method of theoretical approximation of magnetoresistance dependences has been developed, which enables determining unknown parameters of magnetic nanolayers from experimental data, for example, the Han anisotropy field and Hσ magnetostriction field. The developed theory is shown to be in quantitative agreement with experimental results.

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About the authors

D. A. Zhukov

Scientific-Manufacturing Complex "Technological Centre”

Author for correspondence.
Email: D.Zhukov@tcen.ru
Russian Federation, Moscow, Zelenograd, 124498

O. P. Polyakov

Lomonosov Moscow State University; Trapeznikov Institute of Control Sciences, Russian Academy of Sciences

Email: D.Zhukov@tcen.ru
Moscow, 119991; Moscow, 117997

P. A. Polyakov

Lomonosov Moscow State University; Trapeznikov Institute of Control Sciences, Russian Academy of Sciences

Email: D.Zhukov@tcen.ru
Russian Federation, Moscow, 119991; Moscow, 117997

S. I. Kasatkin

Trapeznikov Institute of Control Sciences, Russian Academy of Sciences

Email: D.Zhukov@tcen.ru
Russian Federation, Moscow, 117997

V. V. Amelichev

Scientific-Manufacturing Complex "Technological Centre”

Email: D.Zhukov@tcen.ru
Russian Federation, Moscow, Zelenograd, 124498

D. V. Kostyuk

Scientific-Manufacturing Complex "Technological Centre”

Email: D.Zhukov@tcen.ru
Russian Federation, Moscow, Zelenograd, 124498

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Supplementary files

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2. Fig. 1. Schematic representation of magnetic layers and their physical parameters: orientation of vectors M1, M2, H0, J and OLN.

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3. Fig. 2. Dependence of cos2φ for stable equilibrium orientations of the magnetization vector M on the dimensionless projection of the external magnetic field strength hx.

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4. Fig. 3. Experimental (dots) and theoretical (solid line) dependences of the relative magnetoresistance in the absence of deformation stress on the magnetic field strength.

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5. Fig. 4. Theoretical dependence of cos2φ on the dimensionless magnetic field strength hx for different values ​​of the dimensionless parameter of compressive stress hσ.

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6. Fig. 5. Experimental (dots) and theoretical (solid line) dependences of the relative magnetoresistance on the magnetic field strength: (a) for mechanical compressive stress σ = 30 MPa; (b) for mechanical compressive stress σ = 65 MPa; (c) for mechanical compressive stress σ = 100 MPa.

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