Contact potential difference in the absence of current through the sample in the quantum hall effect regime in InGaAs/InAlAs heterostructure

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The paper presents experimental results of the appearance of voltage at potential contacts in the absence of an external current through the sample in the plateau region of the quantum Hall effect in a heterostructure with an InGaAs/InAlAs quantum well. The occurrence of voltage is associated with the non-equivalence of edge current in potential contact areas in a magnetic field in a system with a two-dimensional electron gas.

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Sobre autores

S. Gudina

M.N. Mikheev Institute of Metal Physics of Ural Division of Russian Academy of Sciences

Email: neverov@imp.uran.ru
Rússia, Ekaterinburg, 620108

V. Neverov

M.N. Mikheev Institute of Metal Physics of Ural Division of Russian Academy of Sciences

Autor responsável pela correspondência
Email: neverov@imp.uran.ru
Rússia, Ekaterinburg, 620108

K. Turutkin

M.N. Mikheev Institute of Metal Physics of Ural Division of Russian Academy of Sciences

Email: neverov@imp.uran.ru
Rússia, Ekaterinburg, 620108

I. Vasil’evskii

National Research Nuclear University MEPhI

Email: neverov@imp.uran.ru
Rússia, Moscow, 115409

A. Vinichenko

National Research Nuclear University MEPhI

Email: neverov@imp.uran.ru
Rússia, Moscow, 115409

Bibliografia

  1. Dolgopolov V.T., Shashkin A.A., Zhitenev N.B., Dorozhkin S.I., Klitzing K.V. Quantum Hall effect in the absence of edge currents // Phys. Rev. B. 1992. V. 46. P. 12 560–12 567.
  2. Huels J., Weis J., Smet J., Klitzing K.V., Wasilewski Z.R. Long time relaxation phenomena of a two-dimensional electron system within integer quantum Hall plateau regimes after magnetic field sweeps // Phys. Rev. B. 2004. V. 69. P. 085 319(6).
  3. Похабов Д.А., Погосов А.Г., Буданцев М.В., Жданов Е.Ю., Бакаров А.К. Неравновесный химический потенциал в двумерном электронном газе в режиме квантового эффекта Холла // ФТП. 2016. Т. 50. С. 1070–1074.
  4. В.А. Кульбачинский, неопубликованые данные.
  5. Гудина С.В., Арапов Ю.Г., Ильченко Е.В., Неверов В.Н., Савельев А.П., Подгорных С.М., Шелушинина Н.Г., Якунин М.В., Васильевский И.С., Виниченко А.Н. Неуниверсальное скейлинговое поведение ширины пиков проводимости в режиме квантового эффекта Холла в структурах InGaAs/InAlAs // ФТП. 2018. V. 52. P. 1447–1455.
  6. Калашников С.Г. Электричество. М.: Наука, 1970. 668 с.

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2. Fig. 1. Photo of the sample.

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3. Fig. 2. Dependences of the voltage recorded at different pairs of potential contacts on the magnetic field at T = 4.2K (a–d); dependences of the longitudinal (Rxx) and Hall (Rxy) resistances on the magnetic field, dotted lines are drawn through the centers of the quantum Hall effect plateau (e); schematic view of the Hall bridge. 1-4 are potential contacts, 5-6 are current contacts (e).

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4. Fig. 3. The dependence of the voltage at potential contacts 3-4 on the magnetic field at temperatures of 4.2 K (gray curve, uncolored symbols) and 1.8 K (blue curve, shaded symbols). The black bold line indicates the Hall resistance at T=4.2 K (right axis). The numbers indicate the numbers of the KEH plateau.

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