Modification of the implanted silicon surface by a powerful light pulse

Capa

Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

We studied the possibility of modifying the near-surface silicon layer before and after ion implantation, followed by pulsed light annealing, in order to structure the surface of the substrates in order to increase the efficiency of their use in solar energy. The results were compared with the data obtained on monocrystalline and implanted germanium.

Texto integral

Acesso é fechado

Sobre autores

B. Farrakhov

Federal Research Center Kazan Scientific Center of Russian Academy of Sciences

Autor responsável pela correspondência
Email: bulat_f@mail.ru

Zavoisky Physical-Technical Institute

Rússia, Kazan

Ya. Fattakhov

Federal Research Center Kazan Scientific Center of Russian Academy of Sciences

Email: bulat_f@mail.ru

Zavoisky Physical-Technical Institute

Rússia, Kazan

A. Stepanov

Federal Research Center Kazan Scientific Center of Russian Academy of Sciences

Email: bulat_f@mail.ru

Zavoisky Physical-Technical Institute

Rússia, Kazan

Bibliografia

  1. Королева Д.А., Целищев В.А., Шайдаков В.В. Солнечная энергетика. М.: Инфа-Инженирия, 2023. 140 с.
  2. Смердов Р.С. // Физ. образ. в вузах. 2019. Т. 25. № 2. С. 276.
  3. Codrin A., Elena L., Stephen C. // PLoS ONE. 2014. V. 9. No. 10. Art. No. e109836.
  4. Аржанов А.И., Савостьянов А.О., Магарян К.А. и др. // Фотоника. 2022. Т. 16. № 2. С. 96; Arzhanov A.I., Savostianov A.O., Magaryan K.A. et al. // Photonics Russ. 2022. V. 16. No. 2. P. 96.
  5. Lima Monteiro D., Honorato F., Oliveira Costa R., Salles L. // Int. J. Photoener. 2012. V. 2012. Art. No. ID743608.
  6. Macdonald D., Cuevas A., Kerr M. et al. // Proc. Solar World Congress (Adelaide, 2001). P. 1.
  7. Томаев В.В., Полищук В.А., Леонов Н.Б., Вартанян Т.А. // Изв. РАН. Сер. физ. 2023. Т. 87. № 10. С. 1446; Tomaev V.V., Polishchuk V.A., Leonov N.B., Vartanyan T.A. // Bull. Russ. Acad. Sci. Phys. 2023. V. 87. No. 10. P. 1478.
  8. Lima Monteiro D.W., Akhzar-Mehr O., Sarro P.M., Vdovin G. // Opt. Express. 2003. V. 11. No. 18. P. 2244.
  9. Rebecca S. // Progr. Photovolt. Res. Appl. 2021. V. 29. P. 1125.
  10. Hyeon-Seung L., Jaekwon S., Hyeyeon K. et al. // Sci. Reports. 2018. V. 8. Art. No. 3504.
  11. Гончар К.А., Божьев И.В., Шалыгина О.А., Осминкина Л.А. // Письма в ЖЭТФ. 2023. Т. 117. № 2. С. 115; Gonchar K.A, Bozh’ev I.V., Shalygina O.A., Osminkina L.A. // JETP Lett. 2023. V. 117. No. 2. P. 111.
  12. Фаттахов Я.В., Галяутдинов М.В., Львова Т.Н., Хайбуллин И.Б. // Опт. и спектроск. 2000. Т. 89. № 1. С. 182; Galyautdinov M.F., Farrakhov B.F., Fattakhov Ya.V., Zakharov M.V. // Opt. Spectrosc. 2009. V. 107. No. 1. P. 640.
  13. Фаррахов Б.Ф., Фаттахов Я.В., Галяутдинов М.Ф. // ПТЭ. 2019. № 2. С. 93; Farrakhov B.F., Fattakhov Ya.V., Galyautdinov M.F. // Instrum. Exp. Tech. 2019. V. 62. P. 226.
  14. Stepanov A.L., Farrakhov B.F., Fattakhov Ya.V. et al. // Vacuum. 2021. V. 186. Art. No. 110060.
  15. Гаврилова Т.П., Фаррахов Б.Ф., Фаттахов Я.В. и др. // ЖТФ. 2022. Т. 96. № 12. С. 1827; Gavrilova T.P., Farrakhov B.F., Fattakhov Ya.V. et al. // Tech. Phys. 2022. V. 67. No. 12. P. 1586.

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML
Baixar
2. Fig. 1. Photographs of the surface of KDB-1 (111) silicon implanted with 50 keV P+ phosphorus ions at a dose of 3.12⋅1015 cm−2 through a 40 μm metal grid after pulsed light annealing on UOL.P-1 with power densities of 60 (a), 240 (b), 900 W⋅cm−2 (c) and durations of 3.5 (a), 750 (b), and 120 ms (c), respectively. Photographs of unimplanted KDB-1 (100) silicon after pulsed light annealing on UOL.P-1 with a power density of 1200 W⋅cm−2 and durations of 70 (d) and 90 ms (d) (the surface was polished before annealing).

Baixar (351KB)
Metadados
3. Fig. 2. Photographs of the surface of non-implanted silicon KDB-1 (100) (a), (111) (b, c) after pulsed light annealing on the Impulse-6 setup with a power density of 20 W⋅cm−2 and durations of 5 (a), 10 (b) and 15 s (c), respectively. Photographs of germanium implanted with Ag+ ions with an energy of 30 keV and a dose of 1.5⋅1017 cm−2, annealed with light pulses with a power density of 10 W⋅cm−2 and durations of 6 (d) and 4.5 s (d).

Baixar (350KB)
Metadados

Declaração de direitos autorais © Russian Academy of Sciences, 2024