Accounting for the energy dispersion of free carriers induced by powerful femtosecond laser radiation in dielectrics
- 作者: Lvov K.V.1, Stremoukhov S.Y.1,2
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隶属关系:
- Lomonosov Moscow State University
- National Research Centre “Kurchatov Institute”
- 期: 卷 88, 编号 1 (2024)
- 页面: 54–59
- 栏目: Wave Phenomena: Physics and Applications
- URL: https://innoscience.ru/0367-6765/article/view/654783
- DOI: https://doi.org/10.31857/S0367676524010102
- EDN: https://elibrary.ru/SAVBFT
- ID: 654783
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详细
Dynamics of free carriers in the conduction band of dielectrics induced by femtosecond near infrared laser radiation is analyzed. It is stressed the importance of accounting for the energy dispersion term in the Fokker-Planck equation describing such dynamics.
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作者简介
K. Lvov
Lomonosov Moscow State University
编辑信件的主要联系方式.
Email: lvov.kv14@physics.msu.ru
俄罗斯联邦, Moscow
S. Stremoukhov
Lomonosov Moscow State University; National Research Centre “Kurchatov Institute”
Email: lvov.kv14@physics.msu.ru
俄罗斯联邦, Moscow; Moscow
参考
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Fig. 1. Density of free carriers formed after exposure to laser pulses with different fluences (a). Dynamics of the average kinetic energy of carriers at different fluences of laser radiation (b).
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Fig. 2. Carrier distribution density over the conduction band for different moments of time (a). Curves are normalized to maximum values. Comparison of the dynamics of the average kinetic energy of carriers with the rate of their generation due to photoionization and impact ionization (b). Laser radiation fluence F = 2 J/cm2.
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Fig. 3. The influence of energy dispersion spreading of carriers on the dynamics of the density of free carriers and their average kinetic energy (a), the rate of generation of carriers due to photoionization and impact ionization (b). Laser radiation fluence F = 2 J/cm2.
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