Multilevel switchings in memristive structures based on oxidized lead selenide

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Abstract

Using oxidized lead selenide as the interface, Ag/PbSeOx/PbSe heterostructures were made, demonstrating stable memristive characteristics. In order to obtain metastable multilevel states on such structures, studies have been performed using different protocols for delivering pulsed signals. By adjusting the number, amplitude, duration, and fill factor of the pulses, 13 metastable resistive states were implemented. The memristor under study showed good stability and reproducibility for several months.

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About the authors

N. A. Tulina

Osipyan Institute of Solid State Physics of the Russian Academy of Sciences

Author for correspondence.
Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka

A. N. Rossolenko

Osipyan Institute of Solid State Physics of the Russian Academy of Sciences

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka

I. M. Shmytko

Osipyan Institute of Solid State Physics of the Russian Academy of Sciences

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka

I. Yu. Borisenko

Institute of Problems of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka

D. N. Borisenko

Osipyan Institute of Solid State Physics of the Russian Academy of Sciences

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka

N. N. Kolesnikov

Osipyan Institute of Solid State Physics of the Russian Academy of Sciences

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka

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2. Fig. 1. Example of 5 cycles of the VAC of the Ag/PbSeOx/PbSe microcontact heterojunction. In the lower left corner, the stability of On and Off states in the Ag/PbSeO/PbSe MC heterostructures. In the bottom right corner schematic view of Ag/PbSeOx/PbSe microcontact type heterojunction. The measurements were carried out on the ArcOne bench with voltage pulses of 200 μs duration with increasing amplitude and voltage step of 0.05 V

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3. Fig. 2. Example of 10 cycles of reproducible (several months of training) resistive switching in Ag/PbSeOx/PbSe heterojunctions with a 1 mm diameter silver film top electrode. In the lower right corner the scheme of the structure

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4. Fig. 3. Off-On transition, current from time normalised to pulse width. 1 - T = 2 s; 2 - T = 1 c; 3 - T = 0.2 c; 4 - T = 40 ms; 5 - T = 10 ms; 6 - T = 2 ms; 7 - T = 1 ms; 8 - T = 0.2 ms. The upper part of the figure shows the shape of the pulse signals

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5. Fig. 4. On-Off transition, current from time normalised to pulse width. 1 - T = 4 s; 2 - T = 1 c; 3 - T = 0.2 c; 4 - T = 0.04 ms. The upper part of the figure shows the shape of the pulse signals

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6. Fig. 5. Dependence of current on time at transition to low impedance state for pulse period T = 1 s with filling factor: 1 - D = 70 %; 2 - D = 60 %; 3 - D = 50 %; 4 - D = 20 %; 5 - D = 10 %. The upper part of the figure shows an example of the form of pulse signals with fill factor D = 50 %

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7. Fig. 6. On-Off transition. Time dependence of current at the transition to the high-resistance state for the period of pulses T = 1 s with filling factor: 1 - D = 50 %; 2 - D = 25 %; 3 - D = 10 % (numbers 11-13 in Table 1). The upper part of the figure shows an example of the pulse waveform with fill factor D = 50 %

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8. Fig. 7. Metastable resistive states from time. Time dependence of resistance at transition to low resistive state for the period of pulses T = 1 s with filling factor: 1 - D = 10 %; 2 - D = 9 %; 3 - D = 4 % (numbers 1, 2 in Table 1). The upper part of the figure shows an example of the form of pulse signals with filling factor D = 10 %

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9. Fig. 8. Metastable resistive states from time. Time dependence of resistance at transition to low resistive state for pulse period T = 200 ms with filling factor: 1 - D = 50 %; 2 - D = 45 %; 3 - D = 30 %; 4 - D = 25 %; 5 - D = 15 %; 6 - D = 5 % (numbers 5, 6, 8-10 in Table 1). The upper part of the figure shows an example of the form of pulse signals with filling factor D = 25

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10. Fig. 9. Metastable resistive states from time. Time dependence of the current during the transition to the high-resistive state for the pulse period T = 1 s with the filling factor: 1 - D = 50 %; 2 - D = 25 %; 3 - D = 10 % (numbers 11-13 in Table 1). The upper part of the figure shows an example of the pulse waveform with filling factor D = 10 %

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