作者的详细信息
Колесников, Н. Н.
| 期 | 栏目 | 标题 | 文件 |
| 卷 54, 编号 2 (2025) | MEMRISTORS | Multilevel switchings in memristive structures based on oxidized lead selenide |
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关键字
Förster effect
atomic layer deposition
charge qubit
dissociation
etching
fluorine atoms
fluorocarbon gases
gas temperature
ionization
kinetics
magnetron sputtering
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
reduced electric field strength
resistive switching
silicon
最新一期
卷 54, 编号 2 (2025)
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关键字
Förster effect
atomic layer deposition
charge qubit
dissociation
etching
fluorine atoms
fluorocarbon gases
gas temperature
ionization
kinetics
magnetron sputtering
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
reduced electric field strength
resistive switching
silicon
最新一期